二氧化钛光催化PPT课件.pptx

课堂讨论二;目录;能源问题;环境问题;环境问题;环境问题;现在问题来了！;什么是光催化;什么是光催化;光催化技术的发展历史;光催化机理;光催化机理;常见半导体的能带结构;常见光催化材料;半导体光催化制氢的条件;TiO2光催化剂的优点;光催化材料的改性;贵金属沉积;复合半导体;有机染料光敏化;离子掺杂修饰;Photocatalysis of Dye-Sensitized TiO2 Nanoparticles with Thin Overcoat of Al2O3: Enhanced Activity for H2 Production and Dechlorination of CCl4;Introduction;Figure 3 compares the XPS spectra of Al2O3 / TiO2 /Pt and TiO2 /Pt in the Al 2p and Ti 2p bands. The Al 2p band of Al2O3 / TiO2 /Pt was positioned at 74.4 eV, which exactly matches that of Al 2p in pure Al2O3 (74.4 eV). The intensity of the Ti 2p band in Al2O3 / TiO2 /Pt was reduced because of the presence of Al2O3 overlayer, but the Ti 2p binding energy (464.34, 458.8 eV) in both Al2O3 / TiO2 /Pt and TiO2 /Pt was identical to that of pure TiO2.;This confirms that the presence of the barrier layer enhances the steady-state concentration of CB electrons in suspended TiO2 particles under irradiation. The higher concentration of CB electrons due to the hindered recombination should lead to the enhanced interfacial electron transfer.;The overall sensitization efficiency rapidly increases with the alumina loading and then reaches a maximum beyond which the efficiency decreases with increasing the barrier layer loading. The optimal loading was found at Al/Ti = 0.009-0.018, and the activity was insignificantly low at Al/Ti = 0.18.;which suggests that the presence of the alumina overlayer does not introduce defect sites that affect the major charge recombination dynamics in TiO2 lattice.;An increase in τ by about 3 times in the presence of Al2O3 layer supports the idea that the barrier layer slows down the recombination. A slight increase in α might be attributed to a shift from electron transport limited charge recombination to more interfacial electron transfer limited dynamics as suggested elsewhere.; Introducing a thin Al2O3 overlayer on the dye-sensitized TiO2 increased activity for hydrogen production and the degradation of CCl4. By measuring TDR spectra of ba