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- 2021-12-01 发布于安徽
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Chapter 1110Bipolar Junction Transistors Field Effect Transistors;For FET:
1) Analyze basic FET amplifiers using the load-line technique.
2) Analyze bias circuits.
3) Use small-signal equivalent circuits to analyze
FET amplifiers.
4) Compute the performance parameters of common-source
FET amplifier configurations.
;BASIC AMPLIFIER CONCEPTS;Inverting versus Noninverting Amplifiers;Voltage-Amplifier Model;Current Gain;Power Gain;Current-Amplifier Model;Transconductance-Amplifier Model;Transresistance-Amplifier Model;Amplifier Analysis;Three layers called base(基极), emitter(发射极),collector(集电区), two PN junction(two diodes);Equations of Operation;Equations of Operation;Common Base; Common Emitter; Common Collector;COMMON-EMITTER CHARACTERISTICS;?;Common-emitter Input Characteristic;Common-emitter Output Characteristics;?;LOAD-LINE ANALYSIS OF A COMMON-EMITTERAMPLIFIER (Input Circuit);LOAD-LINE ANALYSIS OF A COMMON-EMITTERAMPLIFIER (Output Circuit);;?;PNP BIPOLAR JUNCTION TRANSISTORS;?;LARGE-SIGNAL DC CIRCUIT MODELS(Three operation region on Characteristic) Region);When iC becomes zero, we say that the transistor is
cutoff.
When vCE 0.2 V, we say that the transistor is in
saturation.
Amplification occurs in the active region;LARGE-SIGNAL DC CIRCUIT MODELS(Active-Region Model);LARGE-SIGNAL DC CIRCUIT MODELS(Saturation-Region Model);LARGE-SIGNAL DC CIRCUIT MODELS(Cutoff-Region Model);Analysis of the Fixed Base Bias Circuit;?;?;?;To use the bias circuit as amplifier, we want a Q point in the active region, where changes in base current cause the instantaneous operating point to move up and down the load line while in saturation region, the operation point does not move significantly for small changes in base current, and amplification is not achieved. ;Analysis of the Four-Resistor Bias Circuit;;ib(t) denotes the signal current flowing into the base, IBQ is the dc current that flows when the signal is absent, and iB(t) is the total base current. Simil
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