功率二极管600v60a to247快恢复mur.pdfVIP

MUR6060DCT 60A600VFastrecoverydiode 1 Description 60A,600VUltrafastDiodesTheyhavealowforwardvoltagedropand VBR =600V areofplanar,siliconnitridepassivated,ion-implanted,epitaxial V 1.7V construction.Thesedevicesareintendedforuseasenergy F steering/clam diodesandrectifiersinavarietyofswitchingpower IF(AV)=30A sandotherpowerswitching applications.Theirlowstored chargeandultrafastrecoverywithsoftrecoverycharacteristicsminimizes ringingandelectricalnoiseinmanypowerswitchingcircuits,thus reducingpowerlossintheswitchingtransistor 2 Features  Lowpowerloss,  highefficiencyLowforwardvoltage,  highcurrentcapabilityHighsurgecapacity  Superfastrecoverytimes  highvoltage 3 Applications  SwitchingPowerSupply TO-3P  PowerSwitchingCircuits  GeneralPurpose 4 ElectricalCharacteristics 4.1Absolute umRatings (Tc=25℃,unlessotherwisenoted) PARAMETER SYMBOL VALUE UNIT PeakRepetitiveReverseVoltage VRRM 600 V WorkingPeakReverseVoltage VRWM 600 V DCBlockingVoltage VR 600 V AverageRectifiedForwardCurrent(single) 30 A IF(AV) AverageRectifie