RS Components 其他智能设备 晶体管 HGTG18N120BND 使用说明.pdfVIP

HGTG18N120BN Data Sheet August 2014 1200 V NPT IGBT Features HGTG18N120BN is based on Non- Punch Through (NPT) IGBT • 26 A, 1200 V, TC = 110°C designs. The IGBT is ideal for many high voltage switching • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A applications operating at moderate frequencies where low • Typical Fall Time . . . . . . . . . . . . . 140ns at TJ = 150°C conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49304. Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND HGTG18N120BND TO-247 18N120BND NOTE: When ordering, use the entire part number. Symbol G C TO-247 E ©2001 Fairchild Semiconductor Corporation 1 HGTG18N120BN Rev. C1 HGTG18N120BN o Absolute Maximum Ratings TC = 25 C, Unless Otherwise Specified