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- 2022-07-01 发布于上海
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IGBT
FGL60N100BNTD
NPT-Trench IGBT
General Description Features
Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching
technology show outstanding performance in conduction • Low Saturation Voltage : VCE(sat) = 2.5 V @ C = 60A
and switching characteristics as well as enhanced • High Input Impedance
avalanche ruggedness. These devices are well s
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