飞思卡尔Freescale Semiconductor MRFG35010NT1说明书用户手册.PDF

Freescale Semiconductor Document Number: MRFG35010N Technical Data Rev. 7, 1/2008 MRFG35010NT1 replaced by MRFG35010ANT1. Gallium Arsenide PHEMT MRFG35010NT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class 3.5 GHz, 9 W, 12 V AB linear base station applications. POWER FET • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, GaAs PHEMT IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power ó 900 mW Power Gain ó 10 dB N Efficiency ó 28% N • 9 Watts P1dB @ 3.55 GHz O • Excellent Phase Linearity and Group Delay Characteristics O I I T • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. T • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. A CASE 466-03, STYLE 1 A