BTF3050TE 英飞凌芯片 INFINEON 中文版规格书手册.pdfVIP

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  • 2023-07-08 发布于广东
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BTF3050TE 英飞凌芯片 INFINEON 中文版规格书手册.pdf

HITFET - BTF3050TE BTF3050TE Smart Low-Side Power Switch 1 Overview Application • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits • Most suitable for inductive loads as well as loads with inrush currents Features • Single channel device • Very low power DMOS leakage current in OFF state • 3.3 V and 5 V compatible logic inputs PG-TO252-5 • Electrostatic discharge protection (ESD) • Adjustable switching speed • Digital Feedback • Green Product (RoHS compliant) • AEC Qualified Description The BTF3050TE is a 50 mΩ single channel Smart Low-Side Power Switch in a PG-TO252-5 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET. The device is monolithically integrated. The BTF3050TE is automotive qualified and is optimized for 12V automotive and industrial applications. Table 1 Product Summary Operating voltage range V 3 .. 28 V OUT Maximum load voltage VBAT(LD) 40 V Operating supply voltage range VDD 3.0 .. 5.5 V Maximum input voltage VIN 5.5 V Maximum On-State resistance at T = 150°C, V = 5V R 100 mΩ J DD DS(ON) Nominal load current

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