BTS3125EJ 英飞凌芯片 INFINEON 中文版规格书手册.pdfVIP

HITFET - BTS3125EJ Smart Low-Si de Power Switch 1 Overview Basic Features • Single channel device • Very low output leakage current in OFF state • Electrostatic discharge protection (ESD) • Embedded protection functions (see below) • ELV compliant package • Green Product (RoHS compliant) • AEC Qualified Applications • Suitable for resistive, inductive and capacitive loads • Replaces electromechanical relays, fuses and discrete circuits Description The BTS3125EJ is a 125 mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125EJ is automotive qualified and is optimized for 12 V automotive applications. Type Package Marking BTS3125EJ PG-TDSO8-31 S3125EJ Table 1 Product Summary Operating voltage range VOUT 0 .. 31 V Maximum load voltage VBAT(LD) 40 V Maximum input voltage VIN 5.5 V Maximum On-State resistance at T = 150°C, V = 5 V R 250 mΩ J IN DS(ON) Nominal load current I 2 A L(NOM) Minimum current limitation I 7 A L(LIM) Maximum OFF state load cur