SiC-金属连接相关的润湿性及应力缓解问题研究的开题报告.docxVIP

SiC-金属连接相关的润湿性及应力缓解问题研究的开题报告.docx

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与C/SiC-金属连接相关的润湿性及应力缓解问题研究的开题报告 Title: Study on Wetting and Stress Relief Issues related to C/SiC-Metal Connections Background: Carbon fiber-reinforced silicon carbide (C/SiC) composite materials have been widely used in high-temperature and high-stress applications such as aerospace, automobile, and energy industries. To enable these applications, it is necessary to connect C/SiC composite materials with metals. However, due to the difference in surface energy between C/SiC and metals, obtaining good wetting and strong bonding between them is a challenging task. Moreover, during the connection of C/SiC composite materials with metals, significant stress concentrations occur at the interface due to the significant difference in the coefficient of thermal expansion (CTE) of C/SiC and metals. These stress concentrations can result in cracks and failures of the interface. Objectives: The objectives of this research are: 1. To investigate the wetting behavior of C/SiC composite materials with different metals (such as titanium, aluminum, and copper) using different bonding methods (such as brazing, diffusion bonding, and adhesive bonding). 2. To study the stress relief mechanism at the interface of C/SiC composite materials with metals and propose effective methods to reduce the stress concentration and improve the strength of the interface. Methodology: The methodology of this research consists of the following steps: 1. Preparation of C/SiC composite materials with different surface treatments to improve their wetting behavior. 2. Preparation of metal substrates with different surface roughness and surface treatments to improve their wettability. 3. Evaluation of the wetting behavior of different metal-C/SiC composite material combinations using different bonding methods, such as brazing, diffusion bonding, and adhesive bonding, by measuring contact angles and adhesion strength. 4. Investigation of the stress distribution and relief mechanism at the interface of diffe

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