抛光片标准规格及术语.ppt

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2023-09-22 发布于湖北
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抛光片标准规格及术语.ppt

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硅片标准简介;目录;标准化组织;SEMI Semiconductor Equipment and Materials International;ASTM American Society for Testing and Materials;JEITA;SEMI 标准内容;Table of contents-Topical;Table of contents – SEMI M Topical;Specifications for Polished Single Crystal Silicon Wafers;SEMI M1-1109;SEMI M1-0707;2-1 General Characteristics;Growth Method;Cz 生长技术;Fz 生长技术;两种方法的对比;Conductivity Type;Nominal Edge Exclusion ;Wafer Surface Orientation; 2-2 Electrical Characteristics;Resistivity Measured at;Radial Reststivity Variation (RRG);Minority Carrier Lifetime; 2-3 Chemicial Characteristics;Oxygen Concentration;Oxygen Concentration;Radial Oxygen Gradient;Carbon Concentration;Bulk Iron Content;2-4 Structural Characteristics;Dislocation Etch Pit Density;Slip;Lineage;Twin Crystal;Swirl;Shallow Pits;Oxygen Induced Stacking Fault (OSF); 2-5 Wafer Preparation Characteristics ;Wafer ID Marking;Gettering;Intrinsic Extrinsic Gettering;Intrinsic Extrinsic Gettering;Denuded Zone;Backseal;Annealing (Res Stabilization);吸除概念:金属游离?扩散? 被捕获;Edge Surface Condition;Back Surface Condition;Backside finish; 2-6 Dimension Characteristics;2-6 Dimension Characteristics;Diameter;Fiducial Dimensions;Primary Secondary Flat Orientation;Notch;Edge rounding ;Edge Profile;标准边缘模版及特征点坐标值;Thickness;Flatness;平坦度标准;TIR—Total Indicator Reading;FPD—Focal Plane Deviation;Total Thickness Variation (TTV);Bow;Warp;Global Site Flatness;Reference Plane;Sori; Flatness, Site;25 X 25 局部区域;Site Flatness;STIR;SFPD;平整度确定网络;Front Surface Chemistry;标准测试方法;Front Surface Inspection Characteristics;Scratches;Pits;Haze;Localized Light Scatterers (LLS);Contamination / Area;Edge Chips and Indents;Edge Cracks;Cracks, Crow‘s Feet;Craters;Dimples ;Grooves;Mounds;Orange Peel;Saw marks;Dopant Striation Rings;Stains;rms Microroughness;Bac