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IntegratedSemiconductorQuantumDotScintillationDetector:
UltimatelimitforspeedandefficiencyScint2015,June11,2015WWW.SUNYCNSE.COMSergeOktyabrskya,MichaelYakimova,VadimTokranova,andPavelMuratbaSUNYCollegeofNanoscaleScienceandEngineering,AlbanyNYbFermiNationalAcceleratorLaboratory,Batavia,IL1
WhyQDScintillator?MajorpropertiesandchallengesHowtomakeit?TechnologySummaryOutline2
QDSemiconductorScintillator:Intro3BulksemiconductorhasproblemsSlowband-to-bandluminescenceCompetingnon-radiativeprocessesSelf-absorptionPoorcouplingduetohighrefractiveindexMajordriversUsemodernelectronicindustryIII-VtechnologiestobuildafastscintillationdetectorPerformanceHighlightyieldandresolution(closetoGeg-detectors)PicosecondphotontimingFast(100MHz)countrate“Activators”builtwithnanotechnology–epitaxialQDswithlowrelativevolumeandnarrowerEG“Activator”–typicallyimpuritiesinsemiconductorsIsitphysicallyandtechnologicallyfeasible?Proposed“Impregnatedsemiconductorscintillator”[S.Luryi,Int.J.HighSpeedElectronicsandSystems18,2008,973]Semiconductorscintillatorsarewell-established:ZnSwasusedbyRutherfordin1920’sQuantumDots(posites)arebeingstudied[i.e.LétantandWang,Nanoletters,2006]
InAsQDsinGaAsMatrixSelf-assemblyandengineering:AFMandTEMofInAsQDsBandstructureofaQDQDGaAshh1hh2lh2lh1e2e1++--4PLdynamics[Deppeet.alAPL2001]Rise:2-5psInhomogeneousbroadening:RTPLspectrumDecay;0.5-1ns~100%efficiency
QDSemiconductorScintillator:MajorProperties5EnergytransferEnergyfore-hpair:~2.8.EG(EG=1.4eVforGaAs)2xlongercascadeinGaAsElectroncaptureHighelectronmobilityinGaAs~8000cm2/Vs2-5psindopedQDsat1014-1015cm-3densityRadiativebinationtimeandefficiency1nsinInAsQDsCloseto100%efficiencyLYSOGaAs/InAsQDsEnergyfore-hpaircreration(eV/ehpair)204.2Density(g/cc),Z7.1
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