Danfoss丹佛斯Semikron Danfoss Application Note Introduction of new IGBT Generation 7 EN Rev-01 应用指南.pdf

ApplicationNoteRevision:01

AN19-002Issuedate:2019-10-10

Preparedby:ArendtWintrich,PeterBeckedahl

Approvedby:UlrichNicolai

Keyword:IGBT,Gen7,SwitchingBehaviour,CrossReference

IntroductionofnewIGBTGeneration7

1.Introduction1

1.1GeneralIntroduction1

1.2ChipTechnology2

1.3MainAdvantagesofIGBTGeneration7basedPowerModules2

1.4ParameterOverview2

2.ApplicationofGeneration7IGBT3

2.1Switchingbehaviour3

2.1.1Turn-on3

2.1.2Turn-off4

2.1.3Switchinglossdependencyontemperature,voltageandcurrent6

2.1.4Shortcircuit6

2.2GateCapacitance7

2.3Operationjunctiontemperatureupto175C8

2.3.1Furtherconsiderationsforoperationathigherjunctiontemperatures9

2.4HV-H3TRBRobustness9

2.5Practicalrecommendations10

2.5.1Chipshrinkageandcurrentrating10

2.5.2Cross-referencetoIGBT4basedpowermodules10

2.5.3Gateresistorselection10

2.5.4Repetitivepeakcollectorcurrent10

3.Performancecomparison11

3.1MiniSKiiP11

3.2SEMiX3p11

4.Summary12

1.Introduction

1.1GeneralIntroduction

WiththisdocumentSEMIKRONliketointroducethe1200VGeneration7IGBTchipsandtheirrolloutto

differentpowermodulepackages.Thenewchipgenerationwillbeimplementedfromtwoindependent

sources.OnesourceisIn