深圳市羽楷科技AP2N7002DW 0.3A 60V SOT363-6L.pdf

AP2N7002DW

60VN+N-ChannelEnhancementModeMOSFET

Description

TheAP2N7002DWusesadvancedtrenchtechnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas10V.This

deviceissuitableforuseasaBatteryprotection

orinotherSwitchingapplication.

GeneralFeatures

V60VI0.3A

DSD

RDS(ON)2100mΩ@VGS10V（Type：1600mΩ）

ESD2KVHBM

Application

Batteryprotection

Loadswitch

Uninterruptiblepo