深圳市羽楷科技AP4H06LI 4.0A 60V SOT23-6L.pdfVIP

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  • 2024-12-14 发布于广东
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AP4H06LI

60VN+N-ChannelEnhancementModeMOSFET

Description

TheAP4H06LIusesadvancedtrenchtechnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas4.5V.This

deviceissuitableforuseasaBatteryprotection

orinotherSwitchingapplication.

GeneralFeatures

VDS=60VID4A

RDS(ON)85mΩ@VGS=10V(Type:62mΩ)

Application

Batteryprotection

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