Danfoss丹佛斯Semikron Danfoss Application Note 22-001 Rev-01 SiC SBD Switching Characterization EN 应用指南.pdf

ApplicationNote

AN22-001

Revision:01

Issuedate:2024-03-22

Preparedby:DanielPrindle

Approvedby:MartinRˆblitz,StefanH‰user

Keyword:diode,SiC,Schottky,SBD,reverserecovery,MOSFET

DynamicCharacterizationofSiCDiodes

1.Introduction1

1.1Siliconvssiliconcarbide1

1.2Semiconductordoping2

1.3pnjunctionsvs.Schottkybarrierjunctions2

1.4MOSFETbodydiode3

2.Turn-offBehaviourforDifferentDiodeTypes4

2.1MOSFETbodydiode4

2.2SiCMOSFETwithanti-parallelSchottkybarrierdiode5

2.3Schottkybarrierdiodeonly6

2.4ILC:parasiticoscillations7

3.SemikronDanfossModuleDatasheets8

3.1SiCMOSFETonly8

3.2SiCMOSFETandSchottkybarrierdiode9

3.3IGBTandSchottkybarrierdiode(hybridmodule)10

3.4Schottkybarrierdiodeonly10

4.Conclusion10

1.Introduction

Thisapplicationnotedescribestheswitchingbehaviourofsiliconcarbide(SiC)Schottkybarrierdiodes(SBD)

andhowtheydifferfromMOSFETpnbodydiodes.

1.1Siliconvssiliconcarbide

Siliconandsiliconcarbideproductsaremadefromdifferentbasematerials.Siliconproductsaremadefrom

pureSiwafers,whereasSiCwaferscontainbothsiliconandcarbon.ThedifferencesinmaterialgiveSiCa

widerangeofbenefitsoverpuresilicon,suchasahigherswitchingspeedsandheatdissipation(Figure1).

Figure1:Impactofdifferentphysicalparametersofsemiconductormaterials[2]

©bySemikronDanfossInternational/2024-03-22/ApplicationNote/AN22-001ÆPage1/12

PROMGT.1023/Rev.12

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1.2Semiconductordoping

Siliconcanbepositivelyornegativelydopedbyimplantingvariouselementsintothecrystalstructure.For

example,boronhasonefewerelectronthansilicon.When