gh50h65dwb2-7ag意法 深圳恒锐丰科技.pdf

GH50H65DWB2-7AG

Datasheet

Automotive-gradetrenchgatefield-stop650V,50Ahigh-speedHB2seriesIGBT

featuringfreewheelingSiCdiodeinanH2PAK-7package

Features

TAB

7•AEC-Q101qualified

•Maximumjunctiontemperature:T=175°C

1J

•Highspeedswitchingseries

H2PAK-7•Minimizedtailcurrent

•LowVCE(sat)=1.6V(typ.)@IC=50A

•Tightparameterdistribution

C(TAB)•Lowthermalresistance

•PositiveVCE(sat)temperaturecoefficient

•Siliconcarbidediodewithno-reverserecoverychargeisco-packagedin

freewheelingconfiguration

G(1)•Excellentswitchingperformancethankstotheextradrivingkelvinpin

K(2)

Application

•Onboardcharger(OBC)

E(3,4,5,6,7)

•PFCconverter-singlephaseinput

IGBTG1K2E34567CTAB•LLCresonantconverter