埋氧层电荷对功率性器件耐压性能分析.docxVIP

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扬州大学本科生毕业设计（论文）

摘要

SOI是一种高压器件，是在顶层硅和衬底之间加入二氧化硅形成的。由于SOI结构的特殊性使其具有低功耗、隔离性能好等特点，这些特点为SOI结构成为新一代集成电路的衬底材料奠定了基础。在SOI器件结构的耐高电压能力是极为重要的参数。因为在器件中引入了介质层的SOI结构，使得空间电荷区电荷积累过多不能进行扩散运动使得整个器件的耐压性能较差，从而限制了SOI器件在集成电路中的应用。本文围绕纵向耐压理论建立了具有电荷岛的系列高压器件结构。通过增加界面电荷对介电电荷的影响和界面电荷对硅表层电场的衰减作用，来提高器件的击穿电压。利用MEDCI软件对具有界面电荷的器件进行了模拟仿真，分析了界面电荷岛的高度、岛宽度、岛间距以及电荷岛掺杂浓度等器件参数对器件击穿电压的影响。通过调整器件结构参数，最终得到了击穿电压为699伏；散热性能优良的器件。

关键字：SOI埋氧层电荷纵向耐压

ABSTRACT

The?SOI?is?a?high?voltage?device?formed?by?adding?silica?between?the?top?layer?of?silicon?and?the?substrate.?Due?to?the?particularity?of?SOI?structure,?it?has?the?characteristics?of?low?power?consumption?and?good?isolation?performance,?which?lays?the?foundation?for?SOI?structure?to?become?the?substrate?material?of?a?new?generation?of?integrated?circuits.?The?ability?to?withstand?high?voltage?is?an?extremely?important?parameter?in?the?SOI?device?structure.?Because?the?SOI?structure?of?the?dielectric?layer?is?introduced?into?the?device,?the?charge?accumulation?in?the?space?charge?area?is?too?much?and?cannot?be?diffused,?resulting?in?poor?voltage?performance?of?the?whole?device,?thus?limiting?the?application?of?SOI?devices?in?integrated?circuits.?In?this?paper,?a?series?high?voltage?device?structure?with?charge?island?is?established?based?on?the?theory?of?longitudinal?voltage?resistance.?The?breakdown?voltage?of?the?device?is?increased?by?increasing?the?influence?of?interface?charge?on?dielectric?charge?and?the?attenuation?effect?of?interface?charge?on?silicon?surface?electric?field.?The?MEDCI?software?was?used?to?simulate?the?devices?with?interfacial?charge.?The?influences?of?interfacial?charge?island?height,?island?width,?island?spacing?and?charge?island?doping?concentration?on?the?breakdown?voltage?were?analyzed.?The?breakdown?voltage?of?699?volts?was?obtained?by?adjusting?the?structure?parameters?of?the?device.?A?device?with?excellent?heat?dissipation?performance.

Key?words:?SOI?buried?oxygen?layer?charge?longitudinal?voltage?resistance

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