宏盛微半导体AP70N12PT.pdf

AP70N12PIT

120VN-ChannelEnhancementModeMOSFET

Description

TheAP70N12P/Tusesadvancedtrenchtec

hnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas4.5V.This

deviceissuitableforuseasa

BatteryprotectionorinotherSwitchingapplication.

GeneralFeatures

VDS=120VID=70A

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