宏盛微半导体AP6N12MI.pdf

AP6N12MI

120VN-ChannelEnhancementModeMOSFET

Description

TheAP6N12MIusesadvancedtrenchtechnology

toprovideexcellentRDS(ON),lowgatechargeand

operationwithgatevoltagesaslowas4.5V.This

deviceissuitableforuseasaBatteryprotection

orinotherSwitchingapplication.

GeneralFeatures

V=120VI6A

DSD

RDS(ON)180mΩ@VGS=10V（Type：110mΩ）

Application

Automativelighting

Loadswitch

Uninterruptiblepowersupply

PackageMarkingandOrderingInformation

ProductIDPackMarkingQty(PCS)

AP6N12MISOT23-3L6N12-AP3000

AbsoluteMaximumRatings(TC=25℃unlessotherwisenoted)

SymbolParameterRatingUnits

VDSDrain-SourceVoltage120V

VGSGate-SourceVoltage±20V

I@T=25℃DrainCurrent,VGS@10V6A

DC

I@T=100℃DrainCurrent,VGS@10V3.5A

DC

PulsedDrainCurrent118A

IDM

P@T=25℃TotalPowerDissipation30W

DC

P@T=25℃TotalPowerDissipation3