宏盛微半导体HYG400N15NS1D.pdf

HYG400N15NS1D

N-ChannelEnhancementModeMOSFET

FeaturePinDescription

150V/30A

RDS(ON)34mΩ(typ.)@VGS10V

100%AvalancheTested

ReliableandRugged

Halogen-FreeDevicesAvailable

Applications

PowerSwitchingapplication

LEDdrivepower

PowerManagementforDC/DC

N-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

DP:TO-252-2L

G400N15

DateCode

XYMXXXXXX

XYMXXXXXX

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines“Green”

tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightinhomogeneous

materialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothispr

-oductand/ortothisdocumentatanytimewithoutnotice.

V1.0

1

HYG400N15NS1D

AbsoluteMaximumRatings

SymbolParameterRatingUnit

CommonRatings(Tc25°CUnlessOtherwiseNoted)

VDSSDrain-SourceVoltage