宏盛微半导体HYG038N03LR1S.pdf

HYG038N03LR1S

N-ChannelEnhancementModeMOSFET

FeaturePinDescription

30V/18A

RDS(ON)4.0mΩ(typ.)@VGS10V

RDS(ON)5.3mΩ(typ.)@VGS4.5V

100%AvalancheTested

ReliableandRugged

HalogenFreeandGreenDevicesAvailable

(RoHSCompliant)SOP-8L

Applications

PowerManagementforDC/DC

BatteryProtection

N-ChannelMOSFET

OrderingandMarkingInformation

PackageCode

SS:SOP-8L

G038N03

XXXYWXXXXXDateCodeAssemblyMaterial

XXXYWXXXXXG:HalogenFree

Note:HUAYIlead-freeproductscontainmoldingcompounds/dieattachmaterialsand100%mattetinplateTermi-

Nationfinish;whicharefullycompliantwithRoHS.HUAYIlead-freeproductsmeetorexceedthelead-Freerequire-

mentsofIPC/JEDECJ-STD-020forMSLclassificationatlead-freepeakreflowtemperature.HUAYIdefines

“Green”tomeanlead-free(RoHScompliant)andhalogenfree(BrorCldoesnotexceed900ppmbyweightin

homogeneousmaterialandtotalofBrandCldoesnotexceed1500ppmbyweight).

HUAYIreservestherighttomakechanges,corrections,enhancements,modifications,andimprovementstothisp

r-oductand/ortothisdocumentatanytimewithoutnotice.

V1.0

1

HYG038N03LR1S

AbsoluteMaximumRatings

SymbolParameterRatingU