宏盛微半导体AGM1010A-E VER2.8（12寸）.pdf

AGM1010A-E

●GeneralDescription

ProductSummary

TheAGM1010A-EcombinesadvancedSuperTrenchll

MOSFETtechnologywithalowresistancepackageto

provideextremelylowRDS(ON).

ThisdeviceisidealforloadswitchandbatteryBVDSSRDNID

SO

protectionapplications.

●Features100V4.9mΩ90A

■AdvancehighcelldensityTrenchtechnology

PDFN5*6PinConfiguration

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■%

100Avalanchetested

■100%DVDStested

●Application

■MB/VGAVcore

nd

■SMPS2SynchronousRectifier

■POLapplication

■BLDCMotordriver

PackageMarkino

Oigin

ngandrderInformat

Qa

euntity

DviceMarkingDeviceDevicea

PckgRee

aelSizeTapewdith

AMAGM1010

G10A-

01AEPDFN5*6330mm12mm3000

Tablebs

1.AolutM

eaximuma

Rtings(TA25