AGMsemi-AGMH022N10H VER2.71宏盛微半导体89.pdf

AGMH022N10H

●GeneralDescription

Prdu

octSuma

TheAGMH022N10Hcombinesadvancedtrenchmry

MOSFETtechnologywithalowresistancepackage

toprovideextremelylowRDS(ON).

ThisdeviceisidealforloadswitchandbatteryBVDSSRDSONID

protectionapplications.

100V2.Ω220A

●Features2m

■AdvancehighcelldensityTrenchtechnology

TO-263PinCoi

nfguration

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■100%Avalanchetested

■100%DVDStested

●Application

■MB/VGAVcore

nd

■SMPS2SynchronousRectifier

■POLapplication

■BLDCMotordriver

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

AGMH022N10HAGMH022N10HTO-263330mm25mm800

Table1.AbsoluteMaximumRatings(TA=25)

℃

SymbolParameterValueUnit

VDSDrain-SourceVoltage(VGS=0V）100V

VGSGate-SourceVoltage(VDS=0V)±20V

IDDrainCurrent-Contin