AGMsemi-AGM3015H-W1 VER2.5宏盛微半导体74.pdf

AGM3015H-W1

●GeneralDescription

TheAGM3015H-W1combinesadvancedtrenchProductSummary

MOSFETtechnologywithalowresistancepackage

toprovideextremelylowRDS(ON).

ThisdeviceisidealforloadswitchandbatteryBVDSSRDSONID

protectionapplications.30V1.6mΩ240A

●Features

TO-263PinConfiguration

■AdvancehighcelldensityTrenchtechnology

■LowRDS(ON)tominimizeconductiveloss

■LowGateChargeforfastswitching

■LowThermalresistance

■100%Avalanchetested

■100%DVDStested

●Application

■MB/VGAVcore

nd

■SMPS2SynchronousRectifier

■POLapplication

■BLDCMotordriver

PackageMarkingandOrderingInformation

DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity

AGM3015HAGM3015H-W1TO-263330mm25mm800

Table1.AbsoluteMaximumRatings(TA25)

℃

SymbolParameterValueUnit

VDSDrain-SourceVoltage(VGS0V）30V

VGSGate-SourceVoltage(VDS0V)±20V

IDDrainCurrent-Continuous(Tc25℃)(Note1)240A

DrainCurrent-Continuous(Tc100℃)160A

IDM(pluse)DrainCurrent-Pulsed(Note2)