山东2025自考[大功率半导体科学]英语二易错题专练.docxVIP

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山东2025自考[大功率半导体科学]英语（二）易错题专练

一、单项选择题（共10题，每题1分）

1.WhatdoesthetermGaNstandforinthecontextofpowersemiconductordevices?

A.GermaniumAluminumNitride

B.GalliumArsenideNitride

C.GalliumNitride

D.GermaniumNitride

2.Whichofthefollowingmaterialsisknownforitshighelectronmobilityandiscommonlyusedinhigh-frequencypowerdevices?

A.SiliconCarbide(SiC)

B.Silicon(Si)

C.GalliumNitride(GaN)

D.IndiumPhosphide(InP)

3.Theon-stateresistance(Rds(on))ofapowerMOSFETisprimarilyinfluencedbywhichfactor?

A.Gate-sourcevoltage(Vgs)

B.Drain-sourcevoltage(Vds)

C.Temperature

D.Channellength

4.Inpowerelectronics,whatistheprimaryadvantageofusingSiliconCarbide(SiC)overSilicon(Si)forhigh-temperatureapplications?

A.Lowercost

B.Higherthermalconductivity

C.Simplerfabricationprocess

D.Betterradiationresistance

5.ThedriftregioninapowerBJTisdesignedtowithstandhighvoltagesduetoits:

A.Highdopingconcentration

B.Lowdopingconcentration

C.Largearea

D.Highresistivity

6.Whichofthefollowingisakeyconsiderationwhendesigningacoolingsystemforhigh-powerGaNdevices?

A.Lowairflowrequirement

B.Highthermalconductivityofthesubstrate

C.Noneedforheatsinks

D.Immunitytoelectromagneticinterference

7.Thetermreversebreakdownvoltageinpowerdiodesrefersto:

A.Themaximumforwardcurrent

B.Thevoltageatwhichthediodefails

C.Thevoltageatwhichthediodecanblockreversecurrent

D.Theforwardvoltagedrop

8.Whatistheprimaryfunctionofagatedriverinpowerelectronicscircuits?

A.Toreducepowerloss

B.Tocontroltheswitchingspeedofpowerdevices

C.Toincreasetheforwardcurrent

D.Toimprovethermalefficiency

9.TheparasiticthyristoreffectinMOSFETsiscausedby:

A.Highgatecapacitance

B.Forward-biaseddrain-sourcevoltage

C.Reverse-biasedgate-sourcevoltage

D.Shortedgate-draininsulation

10.Whichofthefoll