四川2025自考[大功率半导体科学]英语二高频题考点.docxVIP

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四川2025自考[大功率半导体科学]英语（二）高频题(考点)

一、选择题（共10题，每题2分，合计20分）

1.WhatdoesGaNstandforinthecontextofpowersemiconductortechnology?

A.GermaniumAluminumNitride

B.GalliumNitride

C.GermaniumNitride

D.GalliumAluminumGermanium

2.WhichofthefollowingisNOTamajorapplicationofsiliconcarbide(SiC)powerdevices?

A.Electricvehicleinverters

B.Renewableenergyconverters

C.Consumerelectronics

D.Industrialmotordrives

3.ThetermenhancedmodeinMOSFETsrefersto:

A.Higherpowerdensity

B.Reducedon-stateresistance

C.Lowerbreakdownvoltage

D.Improvedthermalmanagement

4.Whatistheprimaryadvantageofwide-bandgapsemiconductorsoversiliconinhigh-temperatureapplications?

A.Lowercost

B.Higherthermalstability

C.Simplerfabrication

D.Betterscalability

5.WhichmaterialiscommonlyusedforSchottkydiodesinpowerelectronics?

A.Silicondioxide

B.Platinum

C.Gold

D.Siliconnitride

6.TheparasiticthyristoreffectinIGBTsiscausedby:

A.Gateoxidebreakdown

B.Turn-ondelay

C.Uncontrolledturn-off

D.Bodydiodeconduction

7.WhatisthetypicalswitchingfrequencyrangeforGaN-basedpowerdevices?

A.Below100kHz

B.100kHz–1MHz

C.1MHz–10MHz

D.Above10MHz

8.Whichparameteriscriticalforevaluatingtheefficiencyofapowermodule?

A.Packagesize

B.On-statevoltagedrop

C.Gatecharge

D.Thermalresistance

9.ThecoldstartprobleminSiCdevicesisdueto:

A.Highforwardvoltagedrop

B.Insufficientgatedrive

C.Parasiticcapacitance

D.Temperature-dependentbreakdownvoltage

10.WhatisthemainchallengeinintegratingGaNwithtraditionalsilicon-basedpowersystems?

A.Highercost

B.Immaturetechnology

C.Compatibilityissues

D.Lowerefficiency

二、填空题（共10题，每题1分，合计10分）

1.Thebreakdownvoltageofwide-bandgapsemiconductorsisprimarilydeterminedby__________.

2.TheunipolarconductioninIGBTsoccurswhen__________.

3.ThesymbolQinQFP(QuadFlatPackage)standsfor__________