宁夏2025自考[大功率半导体科学]英语二易错题专练.docxVIP

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宁夏2025自考[大功率半导体科学]英语（二）易错题专练

一、选择题（共10题，每题1分）

1.ThetermGaNstandsfor______.

A.GermaniumNitride

B.GalliumNitride

C.GoldNitride

D.GraphiteNitride

2.WhichofthefollowingisNOTatypicalapplicationofSiCpowerdevices?

A.Electricvehicleinverters

B.Solarinverters

C.Mobilephonechargers

D.Radiofrequencyamplifiers

3.Theprocessofcombiningtwoormoresemiconductormaterialstoformaheterostructureiscalled______.

A.Doping

B.Alloying

C.Epitaxy

D.Diffusion

4.Ap-njunctioninapowerdeviceprimarilyfunctionsasa______.

A.Voltagesource

B.Currentsource

C.Rectifier

D.Oscillator

5.ThecriticalbreakdownvoltageofaSiCMOSFETisgenerallyhigherthanthatofaSiIGBTdueto______.

A.Lowerdopingconcentration

B.Higherbandgapenergy

C.Larger漂移层厚度

D.Poorerthermalconductivity

6.Theon-stateresistance(Rds(on))ofapowerMOSFETisinfluencedby______.

A.Gatevoltage

B.Temperature

C.Draincurrent

D.Alloftheabove

7.TheprincipleofoperationforaSiCSchottkydiodeisbasedon______.

A.P-njunctionbarrier

B.Metal-semiconductorcontact

C.Tunnelingeffect

D.Plasmadischarge

8.Whichmaterialiscommonlyusedasaheatsinkmaterialinhigh-powersemiconductordevices?

A.Aluminumoxide

B.Coppernitride

C.Aluminumnitride

D.Siliconcarbide

9.Thetermgatecharge(Qg)inpowerMOSFETsrefersto______.

A.Thechargerequiredtoturnonthedevice

B.Thechargeleakageduringoperation

C.Thechargestoredinthedriftregion

D.Thechargeflowingthroughthesourceterminal

10.ThedriftregioninaSiCIGBTisdesignedto______.

A.Increaseconductivity

B.Reducebreakdownvoltage

C.Absorbheat

D.Enhanceswitchingspeed

二、填空题（共10题，每题1分）

1.ThebandgapenergyofGaNis______thanthatofSi,resultinginhigherthermalstability.

2.Theparasiticturn-oninIGBTscanbeminimizedbyusinga______structure.

3.Thethermalresistance(Rth)ofapowerpackagemeasurestheeffici