ECED 4260 半导体制造工艺 说明书.pdf

TheSemiconductorManufacturingProcess

-WaferManufacturing

I.CrystalPulling–Czochralski(CZ)method

•Dopedpolycrystallinesiliconmeltedat1400

•Inertgasatmosphereofhigh-purityargon

•Singlecrystalsilicon“seed”isplacedintothemelt

andslowlyrotatedasitis“pul

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