集成智能SiC MOSFET功率模块性能分析.pptx

IntegratedIntelligentSiCMOSFET

PowerModule

LiqiZhang,PengkunLiu,SuxuanGuo

02/10/2016

ContentTemperaturesensitivitycomparisonComparisonof1200V80mohmSiCMOSFETand900V65mohmSiCMOSFETLosslesshighpowermodulewithdistributedgatedrivers

TjsensitivitycomparisonSensitivitytojunctiontemperatureofRg,intismuchlowerthanthatofRds,onandVth.Measured8sampleswithTO-247package

Wolfspeed2nd1200V80mohmSiCMOSFET

3rd900V65mohmSiCMOSFETGen-2with1200V80mohm1kV0.047uF1uF0.1uFGateENINVDDGNDSOURCEVDC-ACVDC+Gen-2with900V65mohmVgs=-4V,20V Vgs=-4V,16V1kV0.047uF1uF0.1uFVDC-ACVDC+Driver:UCC27531

Driverrise(10%~90%)falltime(90%~10%)Vgsrise Vgsfall1200V80mohm+UCC2753127.8ns 8.32nsVgsrisespeedusing900Varefasterthanthatof1200V;Vgsfallspeedusing1200Varefasterthanthatof900V.900V65mohm+UCC27531Vgsrise Vgsfall13.4ns 9.98ns

PriorArtHowWedifferentiate1kWLLC(VT)Cree98%(SiC)APEI96.5%(SiC)ETH94.4%(Si)VT95.1%(GaN)8kWLLC(CREE)5kWPSFB(ETH)6kWPSFB(APEI)Noneabove1kW1MHzAnewterritory:MHzkW-levelSiCTechnology

MotivationTraditionalhighpowermoduleSharedgatedrivers,gatecurrentissmallPowerloopisnotoptimizedProposedlosslesshighpowerintegratedmodulewithdistributedgatedriversDistributedgatedrivers,largergatecurrent,fasterswitchingspeedImprovedgateandpowerswitchingloop,minimizedringingCanbeusedinapplicationsuchasmulti-phaseconvertersystemCREESiCMOSFETmoduleProposedintegratedmodulewithdistributedgatedriversFEASimulation