微电子学资料oxidation 1.pdfVIP

Chapter1

OxidationofSilicon

1.GrowthMechanismKinetics

2.OxidationRate

3.OxideProperties

4.OxidationTechnique

1

©ChoByungJin,SNDL,ECE,NUS,2005

1.GrowthMechanismandKinetics

❑Becauseasiliconsurfacehasahighaffinityforoxygen,anoxidelayerrapidlyforms

whensiliconisexposedtoanoxidizingambient.

❑Therearetwobasicchemicalreactionsindescribingthethermaloxidationofsilicon;

➢Dry