微电子技术论文7565614.pdfVIP

  • 2
  • 0
  • 约5.48万字
  • 约 7页
  • 2026-04-13 发布于浙江
  • 举报

4226IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER2016

ACompactModelofDrainCurrentforGaN

HEMTsBasedon2-DEGChargeLinearization

NaveenKarumuri,GourabDutta,StudentMember,IEEE,NanditaDasGupta,Member,IEEE,

andAmitavaDasGupta,Member,IEEE

Abstract—Aphysics-basedsimpleandaccuratecompactmodelwhicharesourcereferenced,mayfailtheGummelsymmetry

ofdraincurrent

文档评论(0)

1亿VIP精品文档

相关文档