基于粒子群算法的BSIM SOI模型参数提取.doc

  A PSO Parameter Extraction Method for SOI MOSFETs based on BSIM SOI Model# ZHENG Xue, ZHANG Guohe, SHAO Jun, CHENG Kebin** 5 10 15 20 25 (The School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049) Abstract: Abstract: A parameter extraction and optimization strategy using PSO (Particle Swarm Optimization) algorithm is presented for SOI (Silicon On Insulator) MOSFETs（ Metal-Oxide -Semiconductor Field Effect Transistor） based on the BSIM SOI 3.1 model which is developed by the BSIM group of UC Berkeley. The global optimal strategy and standard PSO algorithm are implemented to fulfill the extraction of direct-current parameters, which are related to gate voltage and drain voltage. The values of the optimal parameters, which are got from multiple experiments, are as follows: inertia factor w=0; learning factor c1=c2=2; the initialization of the particle swarm is a random distribution; the value of swarm scale is 30. The algorithm shows a perfect convergence rate and can be used as a possible global extraction method for MOSFETs devices. Key words: Microelectronics; SOI MOSFETs; Particle Swarm Optimization; parameter extraction 0 Introduction Model parameter extraction plays an important role in bridging semiconductor manufacturing and integrated circuit design. Most commercial extraction and optimization tools have a default extraction and optimization procedure. PSO (Particle Swarm Optimization) is a global random searching algorithm with swarm intelligence, having the strong searching capability on nonlinear problems[1-2]. Compared with Genetic Algorithm, PSO does not require crossover and mutation operations. It can be easily understood and implemented, and has high velocity of convergence as well. Thus, it can find the optimal solution quickly during the parameter extraction[3-4]. In this paper, a parameter extraction and optimization strategy using PSO is presented for SOI MOSFETs based on the BSIM SOI 3.1 model which is de