F掺杂二氧化锡导电薄膜的制备及机理研究.docVIP

摘 要 本文以SnCl2·2H2O、NH4F为原料，采用溶胶-凝胶法制备FTO透明导电薄膜。通过对薄膜制备的各种工艺参数包括FTO溶胶的配制、基体的处理、涂层厚度、热处理等的实验分析，利用太阳膜透过率测量仪、测试电阻等手段，以光电性能为测试内容，综合探讨了F掺杂浓度、热处理温度、薄膜厚度对薄膜的光电性能的影响。 实验得出FTO溶胶的配置方案为：SnO2的浓度为0.4 mol/L，H2O /SnCl2·2H2O=4 (mol ratio)，pH=2-3，F：Sn (mol%)=5 %。 在FTO薄膜中，适量的F掺杂会显著提高薄膜的导电性，并且透光率良好；随着热处理温度的提高，薄膜的导电性略微提高，透光率提高；薄膜厚度的增加使其导电性提高，但透光率有所下降。 最终得出：F掺杂浓度为5 mol%，热处理温度为500 ℃，薄膜厚度为3层时，FTO薄膜的光电性能最优，其平均透光率可达81.5 %，每厘米间电阻为978 。 关键词：溶胶-凝胶；FTO；SnO2；透明导电薄膜；F掺杂 Abstract In this paper, FTO composite transparent conductive films were prepared by sol-gel method. The raw materials are SnCl2?2H2O and NH4F. The various parameters of film preparation were studied, including the configuration of FTO sol, matrix processing, coating thickness, heat treatment temperature, etc. According to optical performance test, the effect of F doping concentration, heat treatment temperature and film thickness on the surface morphology and optical properties were studied by solar film transmittance measurement instrument and multimeter. The optimal configuration of SnO2 sol: sol concentration 0.4 mo1/L, H2O /SnCl2?H2O=4 (mol ratio), p1H=2-3; For FTO film, the appropriate amount of F doping can significantly improve the film conductivity and transmittance. As the increase of heat treatment temperature, the film conductivity and transmittance increase. As the increase of film thickness, the film conductivity increased, but the transmittance decreased. When the F doping concentration is 5mol%, heat treatment temperature at 500 ℃, and film thickness is 3, the FTO film has the best optical properties, the average light transmission rate is up to 81.5 %, and resistance is 978 per centimeter. Key words: sol-gel; FTO; SnO2; transparent conductive film; F doping 目 录 第1章 绪 论 1 1.1 SnO2薄膜的研究进展 1 1.2 SnO2薄膜的制备方法 4 1.2.1 磁控溅射镀膜 4 1.2.2 热喷涂技术 5 1.2.3 化学气相沉积法(CVD) 5 1.2.4 溶胶-凝胶法 5 1.3 SnO2薄膜的结构和性能 6 1.3.1 SnO2薄膜的结构和性能 6 1.3.2 FTO薄膜的导电机理 7 1.4 透明导电薄膜的应用 8 1.4.1 显示器件中的应用 8 1.4.2 建筑玻璃领域中的应用 8 1.4.3 在光电、光热、电热及气敏器件中的应用 8 1.