体Si和SOI上高κ介质材料研究和应用探索.pdf

定高频C-V特性主要的和唯一的因素。同时随着频率的增高，积累区栅电容 也随之增加，这是由于在更高频率下，内部串联电阻对高频C-V特性的影响 更加显著，因为频率越高MOs电容的阻抗越低的原因。 采用二维模拟软件Medici对以Zr02为栅介质的体硅MOs器件和SOIMOs 器件的性能进行了模拟。系统模拟了以ZrO2为栅介质的体硅MOs器件和常规 MOs器件性能对比，以及ZrO:为栅介质的SOIMOs器件的性能与常规SOIMOs 器件性能的对比。模拟结果将为高 ‘介质材料的应用提供参考。 自主设计了SOI基二维光子晶体波导具体制备工艺。对该波导进行了初步的 理论计算，发现在SOI基底上，以顶层硅和空气孔形成的二维光子晶体，对于 三角晶格周期结构，当r/a为0.4和。.45时，TE和TM光子带隙在约化频率 ()oa/22[C)为0.4130.464区间内均出现重叠，形成二维光子带隙。设计了H, He共注入，采用Smart-Cut工艺双埋层SOI基底的制备流程和具体参数。设计 了以顶层硅和空气孔形成的二维光子晶体波导，以及在空气孔中填充高x介质材 料形成具有不同光子带隙的二维光子晶体波导的具体制备工艺。 ThesisAbstract for Studiesofhighcidielectricmaterialson bulkSiandSOIandtheirapplications by PlinglinZhang StateKeyLaboratoryofFunctionalMaterialsforInformatics,SIMIT, CAS,March,2003 Silicon-on-insulator(SOI)andhighKdielectricmaterialsare two ofthe cutting-edgeresearchfocusesinmicroelectronicsindustry.Basedonthedemandsand supportsofspecialFundsforMajorStateBasicResearchprojectsandtheNational NaturalScienceFoundationofChina,wehavemadeaseriesofinvestigationson fabricationandcharacterizationofhigh ‘dielectricmaterialsonbulkSiandSOI substrates,aswellastheapplicationsofthematerials.Mainnewresultsaredrawnas follows: AmorphousanduniformZrO2thinfilmswerefabricatedonSisubstratesby ultrahighvacuum electronbeamevaporation.Thethinfilmshavegood stability,Whentheannealing waskeptunder600`C,thefilmskept amorphousandtheinterfacesbetweenZr02andSisubstratewereclearandsharp. Nointerfacialproductswereprobed.Butwhenthetemperatureincreasedtohigher than7000C，theamorphousthinfilmschangedintomixtureofamorphousand polycrystallineZr02.Alsointerfacialproductsappeared. ZrO2thinfilmsweredepositedbypulsedlaserdeposition.Wefoundthat substratetemperaturehadagreatinfluenceontheirsurfacemorphology,surface roughnessandI-Vcharacteristics.ButtheZr0