浅析纳米制造所面对困难和挑战.docVIP

浅析纳米制造所面对的困难和挑战 Nano fabrication is analysed facing difficulties and challenges 纳米科学和技术所触及的是具有尺寸在1-100纳米范围的构造的制备和表征。在这个范畴的研讨举世注目。无论是从根底研讨（探究基于非经典效应的新物理现象）的观念动身，还是从应用（受因构造减少空间维度而带来的优点以及因应半导体器件特征尺寸持续减小而需求这两个方面的要素差遣）的角度来看，纳米构造都是令人极端感兴味的。 Nano science and technology is with size has been reached in the construction of the 1-100 nm range of preparation and characterization. Addressed in this category of the world. From bedrock for discussion (explore new physical phenomena) based on the classic effect of the concept of set off, or from the application (from the advantages of structure to reduce spatial dimensions, and according to characteristics of semiconductor devices continues to decrease in size and demand of these two aspects factor sent) perspective, the nano structure is an extreme sense of fun. 为了充沛发挥量子点的优势之处，我们必需可以控制量子点的位置、大小、成份已及密度。其中一个可行的办法是将量子点生长在曾经预刻有图形的衬底上。由于量子点的横向尺寸要处在10-20纳米范围（或者更小才干防止高激起态子能级效应，如关于GaN资料量子点的横向尺寸要小于8纳米）才干完成室温工作的光电子器件，在衬底上刻蚀如此小的图形是一项应战性的技术难题。关于单电子晶体管来说，假如它们能在室温下工作，则请求量子点的直径要小至1-5纳米的范围。这些微小尺度请求已超越了传统光刻所能到达的精度极限。有几项技术可望用于如此的衬底图形制造。 Full play to the advantages of quantum dots, we have to control the position of the quantum dots, size, composition and density. One option is to quantum dots grown in engraved with graphics on the substrate of once. The lateral size of each quantum dot is 10 to 20 nm range (or smaller caliber prevent high excited state energy level effect, such as information about GaN quantum dots of the transverse size is smaller than 8 nm) talents to complete optoelectronic devices at room temperature, the substrate etching such small graphics play is a technical problem. On single electron transistor, if they can work at room temperature, then request the diameter of the quantum dots is smaller to the range from 1 to 5 nm. These small scale request has surpassed the traditional lithography can reach the precision of the limit. There are several techniques could be used for manufacturing such a substrate graphics. 电子束光刻通常能够用