纳米压痕位移突变机理研究Ξ.pdfVIP

Journal of Mechanical Strength 机 　械 　强 　度 2004 ,26 ( S) :001～004 纳米压痕位移突变机理研究 MECHANISTIC STUDY ON NANOINDENTATION CREEP IN SINGLE CRYSTALS 乔利杰 　郜 　欣 　　王玉桂 　　宿彦京 　　褚武扬 (北京科技大学 材料物理与化学系 ,北京 100083) QIAO LiJie 　GAO Xin 　WAN G Yu Gui 　SU YanJing 　CHU WuYang ( Department of Materials Physics , University of Science and Technology Beijing , Beijing 100083 , China) 摘要 　用铁和 ZnO 单晶研究纳米压入时的位移突变和蠕变突变。结果表明 , 电解抛光的纯铁压入时会出现位移突 变 ,突变前后的载荷 —位移曲线明显不同 ,它对应表面膜破裂。而对于 ZnO 单晶来说 ,突变前后载荷 —位移曲线变化不 大 ,该突变意味着位错的爆发式发射。随加载速率降低 ,发生位移突变的临界载荷 PC 也下降。当 P PC 恒载荷蠕变 时 ,位移缓慢升高直至饱和 ,但无突变 ;如 P PC ,恒载荷下保持一定时间就会发生蠕变突变 , 随后位移缓慢升高至饱 和 ;如 P P ( ) 门槛载荷 ,则不发生蠕变和蠕变突变。 关键词 　单晶 　纳米压痕 　位移突变 　蠕变 　表面膜 中图分类号 　TG111. 8 Abstract 　Excursion in depth during loading or creeping under sustained load of iron steel and ZnO single crystals as well as the effect of hydrogen have been investigated by means of nanoindentation. Results show that there is sudden excursion in displacement dur ing nanoindentation in electropolished specimens. The curves are quite different before and after the excursion , which is ascribed to film breaking. The change of load and depth is little for the ZnO single crystal. This indicates that the excursion was caused by dislocation emission. The critical load PC corresponding to the excursion decreased with decreasing the loading rate. During creeping under sus tained load of P PC , the displacement will increase slowly to a saturation value , and no displacement burst. During creeping under sustained load of