The Semiconductor in Equilibrium 2教程.pdfVIP

Chapter 4 The Semiconductor in Equilibrium (續) 本質材料經摻雜質後變成非本質材料，摻雜後如果電子總數高於摻雜前， 這樣的材料稱為n型半導體。摻雜後如果電洞總數高於摻雜前，這樣的材 料稱為p型半導體。 4.2.3 Group III-V Semiconductors 三五族材料的摻雜 (VI) 碲 (VI) (IV) (IV) 鈹 (II) (II) (IV) 鎘 (IV) GaAs (Intrinsic GaAs) 3+5-8=0 GaAs (Dopant with zinc) 2+5-8=-1 (p-type semiconductor) The situation in the group III-V compound semiconductors, such as gallium arsenide, is more complicated. Group II elements, such as beryllium (鈹) , zinc, and cadmium (鎘) , can enter the lattice as substitutional impurities, replacing the group III gallium elements to become acceptor impurities. 三五族材料的晶格包含一個三族原子與一個五族原子，因此其兩個原子所 形成的共價鍵剛好八個電子，是穩定的狀況。假如其中三族原子被二族雜 質原子取代，那麼這個共價鍵就變成七個電子，因此產生一電洞，變成 p 型材料。 GaAs (Intrinsic GaAs) 3+5-8=0 GaAs (Dopant with selenium硒 ) 3+6-8=1 (n-type semiconductor) Similarly, group VI elements, such as selenium and tellurium, can enter the lattice substitutionally, replacing the group V arsenic element to become donors impurities.同理，如果五族原子被六族雜質原子取代，那麼形成共 價鍵後會多一個自由電子，因此材料變成 n型材料。 GaAs (Dopant with Si) GaAs (Dopant with Si) 4+5-8=1 (n-type) 3+4-8=-1 (p-type) Group IV elements such silicon and germanium, can also be impurity atoms in GaAs. If a silicon atom replaces a gallium atom, the silicon impurity will act as a donor, but if the silicon replaces an arsenic atom, the silicon impurity will act as an acceptor. Experimentlly in GaAs, it is found that germanium is predominantly an acceptor and silicon is predominantly a donor. 同理，四族原子例如 Si ，Ge也可以用來作為三五族材料的雜質，如果四族 雜質原子是取代三五族中的三族原子，則共價鍵會多一個電子，材料變成 n型，如果如果四族雜質原