表征电流增益稳定性和雪崩模式4H-SiC BJT运行.pdfVIP

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012 2795 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Siddarth G. Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov, and Ranbir Singh, Member, IEEE Abstract—The stability of the electrical characteristics of SiC n-p-n bipolar junction transistors (BJTs) is investigated under long-term avalanche-mode, dc, and pulsed-current operation.