ZnO薄膜论文：氧化锌基薄膜晶体管磁控溅射法制备及性能的研究.docVIP

ZnO薄膜论文：氧化锌基薄膜晶体管的磁控溅射法制备及其性能研究 【中文摘要】ZnO是一种新型的直接带隙宽禁带Ⅱ-Ⅵ族化合物半导体材料,室温下的禁带宽度为3.37 eV,其激子结合能高达60 meV,可以实现室温下的高效激子复合发光,是一种理想的短波长发光器件材料。目前,以ZnO基薄膜为有源沟道层的薄膜晶体管,其迁移率比最常用的硅薄膜晶体管高一个数量级以上,而且对可见光的透明度大于80%,是最有希望的下一代薄膜晶体管。本实验采用射频磁控溅射法系统研究了不同制备参数对ZnO薄膜的影响,衬底温度对镓掺杂氧化锌薄膜(GZO)的光电性能的影响,以及GZO薄膜作为有源层的ZnO基薄膜晶体管特性等方面进行了研究,研究的主要内容包括以下三个方面：(1)采用超高真空磁控溅射设备首先在不同衬底温度、溅射功率、氧氩比、溅射气压条件下在玻璃衬底上沉积了ZnO薄膜,并利用X射线衍射仪,扫描电镜,原子力显微镜,紫外-可见分光光度计,荧光分光光度仪对样品进行了测量。找出制备结构缺陷密度小,晶粒趋向性好的最佳生长工艺条件：衬底温度650℃,溅射功率为120 W,氧氩比为40：20,溅射气压为2.5 Pa,在此条件下生长的ZnO薄膜结晶质量高,c轴取向好,并且在可见光区具有较高透过率,可以制备薄膜晶体管。(2)采用超高真空磁控溅射设备在不同衬底温度的玻璃衬底上沉积了掺镓3%的ZnO薄膜,研究了衬底温度对该薄膜的透过率和电学特性的影响。制备薄膜在可见光的透过率达到了80%以上,其中高于650℃制备的掺镓3%的ZnO薄膜透过率低于80%是由于衬底玻璃开始融化导致的,薄膜的导电性能随着衬底温度的升高而增强,主要是因为薄膜的结晶质量提高引起的。(3)我们用Si衬底作为底电极,二氧化钛和氧化镓的交替多层膜作为绝缘层,掺镓3%的ZnO薄膜作为有源层,制备了ZnO薄膜晶体管,探索器件的性能。 【英文摘要】Zinc oxide (ZnO) is a novelⅡ-Ⅳcompound semiconductor with a wide band gap of 3.7 eV. ZnO is an ideal short wavelength optoelectronic devices due to its high binding energy of 60 meV and strong excitonic emission at room temperature. At present, transistor with ZnO thin film as an active channel layer is the most favorite transistor because of its high optical transmission (85%) in visible range and high mobility (orders of magnitude higher than common silicon thin film transistor).In this work, we studied the effects of experimental conditions on the properties of ZnO films deposited on glass substrates by radio frequency (RF) magnetron sputtering. The effects of the growth temperature on Ga-doped ZnO films, and the temperature on transistor with ZnO thin film as an active channel layer were studied. The main contents are as follows:(1) ZnO thin films was deposited on glass substrates by radio frequency (RF) magnetron sputtering technique with different experimental conditions, such as:substrate temperature, RF power, gas ratio of Ar to O2 and pressure. The X-ray diffractometery, scanning electron microscopy, atomic force microscopy techniques were used to investigate the lowest defect den