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Enhanced ferroelectric and dielectric properties in BiFeO3
modified PZT solid solution films
Liu Hongri1, 2 , Liu Zuli1*, Liu Qing, Li Xingao, Yao Kailun 1
1 Department of Physics, Huazhong University of Science and Technology, Wuhan, China,
(430074)
2 Department of Physics, Hubei Normal University, Huangshi, China (435002)
E-mail :lhr1229@126.com
Abstract
(PbZr Ti O ) -(BiFeO ) films have been prepared on LaNiO /SiO /Si substrates by sol-gel process
0.5 0.5 3 x 3 1-x 3 2
at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that the samples show ( 110)
preferred orientation or random orientation according to the x and no impure phase was observed for
all films. The study of ferroelectricity shows that the saturated polarizations are enhanced by the
2 2 2
incorporation of BiFeO3. Remnant polarization of 33.7 µC/cm , 36.8 µC/cm , 34.4 µC/cm and 37.6
µC/cm2 are observed for the films with x=0 to 0.20. In addition, dielectric properties were enhanced
through the solid solution with BiFeO3. Leakage conduction was also increased by the incorporation of
BiFeO .
3
Keywords: (PbZr Ti O ) -(BiFeO ) films; sol gel; ferroelectricity; dielectric property; leakage
0.5 0.5 3 1-x 3 x
current.
1. Introduction
In recent years, extensive attention has been focused on multiferroic materials, in which both
electrical and magnetic ordering can
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