磁控溅射制备增透ITO薄膜性能研究.pdfVIP

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11  光电工程 Vol.32, No.11   2005 11 Opto-Electronic Engineering Nov, 2005  1003 501X(2005)11 0020 05 磁控溅射制备增透 ITO 薄膜及其性能研究 李世涛 ，乔学亮，陈建国，王洪水，贾 芳     430074) !#$%()%*+,-./0 123456 78 ITO(In O : SnO =1:1)9:;==? 2 3 2 @ABCDE PAr F 0.2 G3.0PaHI=f O2 F 0 G10sccmHJKLMN 1)%O PAr Pf O2 QRS 2T458UV WXYZ[ 8\ UV % ITO 9: ; f O2 Q]^9: _I`abcQRd ITO 9:e f n f ITO Yj8)%kl Ar n% \ )%of pqYjrs ITO g O2 S hi PS m d Q ; cS 9: 8 %ft=uv4wxyUV O e ; H H9:zc H H PAr F 0.8Pa f O2 F 2.4sccm F 241.5nm nmin {1.97 |y}~f 89.4 ‚ƒ„…† ‡ 75.9Ω/□,3 f 8.8×10 4Ω ·cm AFM YZ F  € Hˆ‰F ‰ F Š ; ‹Œ YjŽ Yj‘’(RMS=3.04nm) 9: H ; “”•[()%gI=g - } ITO 9:g– g— ˜™š›# + œžŸ# TN304.2 2 A Study on the preparation and properties of antireflective ITO thin films by magnetron sputtering LI Shi-tao   QIAO X