郭狄洪72-73-A36.docVIP

Equilibrum Distribution of Electrons and Holes The distribution (with respect to energy) of electrons in the conduction band is given by the density of allowed quantum states times the probability that a states is occupied by an electron. . This statement is written in equation from as n (E) = g c (E)f F (E) (3.1) where f F (E) is the Fermi-Dirac probability function and g c (E) is the density of quantum states in the conduction band . the units of n (E) are # of electrons per cm3 per unit of energy . The total electron concentration per unit volume in the conduction band is then found by integration Equation (3.1) over the entire range of energies for the conduction –band energies. Similary, the distribution (with respect to energy ) of holes in the valence band is the density of allowed quantum states in the valence band multiplied by the probability that a states is not occupied by an electron.We can express this as P (E) = gv(E)[1梖F(E)] (3.2) The units of p(E) are # of holes per cm3 per unit of energy . Tehe total hole concentration per unit volume is found by integrating Equation (3.2) over the entire range of energies for the valence – band energy . To find the thermal-equilibrum electron and hole concentrations , we need to determine the position of the Fermi energy Ef with respect to the bottom of the conduction – band energy Ec and the top of the valence – band energy Ev and the top of the valence – band energy . To address this question , we will initially consider an intrinsic gemiconductor is a pure semiconductor with no impurity atoms and no lattice defects in the crystal (e.g . , pure silicon) . We have argued in Chapter 2 that, for an intrinsic semiconductor at T = 0 K , all energy states in the valence band are filled with electrons and all energy states in the conduction band are empty of electrons . The Fermi energy must , therefore , be somewhere between Ec a