High-Pressure Water-Vapor Annealing for Enhancement of a-SiH Film Passivation of Silicon Surface.pdfVIP

CHIN．PHYS．LETT．Vo1．31，No．10(2014)108501 High—PressureW ater—VaporAnnealingforEnhancementofa—Si：H Film Passivation ofSilicon Surface GUOChun—Lin(郭春林)，WANGLei(汪雷) ，ZHANGYan—Rong(张艳蓉)，ZHOUHai—Feng(周海峰) LIANGFeng(梁锋)，YANGZhen—Hui(杨振辉)，YANGDe—Ren(杨德仁) StateKey LaboratoryofSiliconM aterials，andDepartmentofMaterialsScienceandEnglneering ZhejiangUniversity,Hangzhou310027 (Received4March2014) Weinvestigatethee抒ctofamorphoushydrogenatedsiliconra—Si：H)filmspassivatedonsiliconsurfacesbasedon high—pressurewater-vaporannealing(HWA)．Theeffectivecarrierlifetimeofsamplesreachesthemaximum value after210。C，90min 日Ⅵ ．Capacitance—voltagemeasurementrevealsthattheHWA noton great reducesthe densityofinterfacestates(Dit)，butalsodecreasesthefixedcharges d)mainJycausedbybulkdefects．The changeofhydrogenandoxygeninthefilm ismeasuredbYaspectroscopicellipsometerandaFourier-transform infrared 咖 )spectrometer．A11theseresultsshow thatH isausefujmethodtoimprovethepassivation effectofa—Si：H filmsdepositedonsilicon surfaces． PACS：85．30．一Z88．4o．站 DOI：10．1088／0256—307X／31／10／108501 In solar cellfabrication．one ofthe important ficiencyof24．7％ onaheterounctionwith intrinsic trendsforcostreduction isthe useofthin silicon thinlayerfHIT1solarcellsinthe1ab．InHIT solar wafers．I Surfacedefects．danglingbondsandimpu— cells．theintrinsica-Si：H buffer1ayerfnophosphorus rities．which can inducethe recombination ofcarri— orborondoping)playsasignificantrole．Itisbelieved ersatsurfaces．becomecritica1when using thinner thatsuchafilm canyieldanoutstandingpassivation silicon wafers．Therefore．agood surfacepassivation effectonthesurfaceofc-Si．whichmakesHIT solar forsiliconwaferstoimprovethesurfaceconditionbe— cellssho