GaN基p-i-n紫外探测器.pdfVIP

GaN-based p-i-n Ultraviolet Detectors LI Xue KANG Yong XU Yunhua LI Xiangyang GONG Haimei FANG Jiaxiong State Key Laboratories of Transducer Technology ,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,China Abstract: P-i-n ultraviolet detectors of two active structures were fabricated on epitaxial GaN films grown by metalorganic chemical vapor deposition. The Current-voltage characteristics, spectral responsivities and transient responses of the diodes were measured to charac