以溅射为主的迭层硒化法制备大面积铜铟镓硒薄膜.pdfVIP

45 卷 4 期 真 空 VACUUM Vol. 45, No. 4 2008 年7 月 Jul. 2008 溅射为主的叠层硒化法制备大面积铜铟镓硒薄膜* ， 飞，廖 成，周 震，韩俊峰 谢华木,赵 夔 (北京大学重离子物理研究所，北京 100871) 摘 要：本文采用基于溅射为主的四元叠层硒化法制备大面积铜铟镓硒薄膜. 分别利用 SEM 与 EDX 对 四元叠层这一新方法制备的薄膜进行微观结构分析与成分分布分析。结果发现，在采用四元叠层发制备 CIGS 薄膜中，提高衬底温度， 制 Se 源温度即 制预置层中 Se 的含量可以有效的改善薄膜的微观结 构，对已经制备完毕的薄膜进行二次退火，不但可以获得比较好的微观结构，同时还可以有效的 制 Ga 在薄膜内部沿深度方向的分布。 关键词：铜铟镓硒薄膜；叠层法；大面积 ： ： 中图分类号 TB43 ，TN403 .2 文献标识码 A 文章编号：1002 -0322 （2008 ）04 -0066 -04 Application of sputtering -based laminating selenylation process to preparation of CIGS thin films JIAO Fei, LIAO Cheng , ZHOU Zhen, HAN Jun-fei, XIE Hua -mu, ZHAO Kui (Heavy Ion Phys ics Institute , Beij ing Univ . , Be ij ing 100871, China) Abstract: A sputtering -based laminating selenylation process was developed and applied to the preparation especially the commercial production of large -area CIGS thin films , ie . , the Cu (In ,Ga) Se2 films . SEM and EDX were used to analyze the microsturcture and composition distribution of the CIGS films prepared by the process developed . The results revealed that the film microstructure can be improved greatly if increasing the substrate temperature and controlling the temperature of Se source to increase Se content in precursor layers . After deposited , the CIGS thin films were reannealed so as to improve further their microstructure and , whats more , to control efficiently the Ga distribution along the film thickness. Key word: CIGS thin film; laminating process ; large -area film 铜铟镓硒（Cu (In, Ga) Se2