用XPS和AFM等方法研究氮化钛薄膜的物理化学特性.pdfVIP

24 6 2004 1112 VACUUM SCIENCE AND ECHNOLOGY(CHINA) 459 XPS AFM 1,2 2 1 1* 江 宁 沈耀根 张寒洁 鲍世宁 ( 11 310027; 21 ) Influence of Substrate Bias on Properties of TiN Films with X-ray Photoelectron Spectroscopy and Atomic Force Microscopy Studies 1,2 2 1 1* Jiang Ning , Shen Yaogen , Zhang Hanjie and Bao Shining (11Physics Dep artment, Zhej iang University, Hangzhou 310027, China; 21Department of Manuf acturing Engineering Engineering Management, City University of Hong ong , Hong ong SAR, China) Abstract iN films were grown on Si ( 100) substrate,biased with a voltage ranging from 0 to - 500 V,by reactive under-balanced DC magnetron sputtering. he filmwas studiedwith X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) study. he results show that the substrate bias voltage significantly affects its mechanical properties.For instance, grown at a bias of - 100 V,the films display the highest hardness and elastic modulus.Plotting the film RMS surface roughness and the biasvoltage,we have a curve goes down,reaching a bot- tom at - 100 V and goes up afterwards from - 100V to - 500V. Similar nonlinear variations in i2p and N1s core level spectra were also recorded before and after Ar ion sputtering.We may conclude that bias voltage alters the chemical compositions and chemical states during film growth.XPS results show that appropriate substrate bias favors the bonding of iN and th