N型Ba8Ga16Ge30-xSbx化合物电输运性能研究.pdfVIP

G16 N 型 Ba Ga Ge Sb 化合物的电输运性能研究 8 16 30-x x ∗ 陈建敏 张婷 李炜 周丽梅 蒋俊 许高杰 （中国科学院宁波材料技术与工程研究所，浙江省宁波市 315201 ） 摘要 采用高温融结合放电等离子烧结法制备了 N 型 Ba Ga Ge Sb （x ≤ 4 ）化合物，在室温至950K 的温度范围内测量了 8 16 30-x x 其电输运性能，包括 Seebeck 系数、电导率以及室温载流子浓度和迁移率，研究了掺杂元素 Sb 的含量对化合物电性能的影 响规律。结果表明，随着 Sb 含量增加，Ba Ga Ge Sb 化合物的电导率逐渐减小，Seebeck 系数先增大而后减小。当x = 1 8 16 30-x x 时，在 900K 获得了最大功率因子（ 2 2 α σ ），约为 13.45 μW/K m ，这表明适量的 Sb 掺杂可使电输运性能得到优化。 关键词：高温熔融，放电等离子烧结，Ba Ga Ge Sb 化合物，热电性能 8 16 30-x x Thermoelectric properties of n-type Ba Ga Ge Sb compounds 8 16 30-x x CHEN JM, ZHANG T, LI W, ZHOU LM, JIANG J, XU GJ (Ningbo Institute of Material and Technology Engineering, CAS, Ningbo 315211, China) Abstract N-type Ba Ga Ge Sb (x ≤ 4) compounds were synthesized by combining melting reaction with spark 8 16 30-x x plasma sintering (SPS) method. The electrical properties, including Seebeck coefficient, electrical conductivity, carrier concentration and mobility were measured to investigate the effect of doping. As Sb content increased, the electrical conductivity of Ba8Ga16Ge30-x Sbx decreased while the Seebeck coefficient increased firstly and then 2 decreased. The power factor reached 13.45 μW/K m for Ba Ga Ge Sb, indicating that the electrical properties