光伏组件PID测试.pdf

Insert picture here 10 x 17 cm TÜV SÜD: Partnership adds value Potential Induced Degradation (PID)Service Introduction ()(PID) TÜV SÜD Greater China Content 1 Potential Induced Degradation (PID) Background Introduction PID 2 What we inspect in Potential Induced Degradation PID 3 Standards related to Potential Induced Degradation PID PID 4 Present ongoing test at lab 5 QA TÜV SÜD 2 7 May 2012 Potential Induced Degradation (PID) Background Introduction What is PID PID Potential-induced degradation (PID) of crystalline silicon solar cells was first observed by Sunpower in 2005 It was found that leakage current through the front glass and encapsulation material leads to accumulation of trapped negative charge on at the surface of the cells. The surface passivation provided by the front surface field of these cells degraded. The fill factor (FF), short-circuit current density (Jsc) and open-circuit voltage (Voc) were significantly reduced. PIDSunpower2005 FFJsc Voc In 2010, NREL and Solon demonstrated that PID is a fundamental risk whenever state-of-the-art p-type crystalline silicon solar cells are used in standard modules at high negative bias 2010NREL Solon p PID TÜV SÜD Slide 3 The future is bright 5 May 2009 1.1 Three degradation modes of PID PID Ionic motion in the packaging of the active layer leads to accumulation of charge or charged ions over the semiconductor surface Charge influences surface field of semiconductor active layer. In severe cases, accumulation of mobile ions such as Na in the glass leads to delamination. Ionic