双层侧壁保护的Si深槽刻蚀技术.pdfVIP

Microscope, Measurement, Microfabrication Equipment 双层侧壁保护的Si 深槽刻蚀技术 邓建国, 刘英坤, 段 雪, 苏丽娟 ( 中国电子科技集团公司 第十三研究所, 石家庄 0500 51) : 提出 一种先进的ICP Si 深槽刻蚀工艺在 Bosch 工艺的基础上加以改进, 以SF6 / O2 作为刻蚀气体, C4 F8 作为侧壁钝化气体, 通过在刻蚀过程中引入少量的O2 , 使得在刻蚀Si 深槽过程中侧壁形成由氧离子辐照产生的SiO2 薄膜和CFx 聚合物淀积产生的双层保护层, 强烈 保护Si 槽侧壁不被刻蚀, 保证 良好的各向异性刻蚀同时, 通过优化刻蚀和钝化的时间周期, 进一步提高 刻蚀后Si 槽的陡直度和平滑的侧壁效果采用这种工艺技术可制作出满足台面晶 体管高性能梳状沟槽基区晶体管需要的无损伤平滑陡直的Si 槽侧壁形貌 : 感应耦合等离子体; Bosch 工艺; 硅; 双层侧壁保护; 各向异性刻蚀 : TN305. 7; TN304. 12 : A : 1671-4776 (2008) 08-0480-04 Technology with Double SideWall Protection Film for Silicon Deep Trench Etching Deng Jianguo, iu Yingkun, Duan Xue, Su ijuan ( The 13th Research I nstitute, CE TC, Shij iaz huang 0 50 05 1, China) Abstract : An advanced silicon deep trench etching technology based on inductivelycoupled plasma ( ICP) was proposed. SF6 / O2 and C4 F8 served as reaction and sidewall passivation gas respectively, double sidewall protection films composed of polymer CFx and SiO2 can be formed during silicon deep trench etching by adding a little O2 . It can prevent the sidewall from etching and ensure the etching nonisotropically. T he smooth sidewall and steep profile can be obtained by varying fac tors and technology parameters. T his technology can be used for manufacturing mesa transistors and high performance interdigitated trench base transistors. Key words: inductivelycoupled plasma ( ICP) ; Bosch technology; silicon; double sidewall protection; nonisotropic etching EEACC: 2550 G; 2520 C ( ICP) 0 引 言 RIE PE , , Si , ICP , (PE) ( RIE) ( ECR)