东南大学秦明老师半导体器件原理与工艺3.1.ppt

硅的HNA腐蚀-3 硝酸的作用 在水中正常溶解：HNO3??HNO3- +H+ 自催化以形成亚硝酸和空穴 HNO2+HNO3?N2O4+H2O N2O4+HNO2??2NO2-+2h+ 2NO2-+2h+??2HNO2 腐蚀剂必须到表面才能和硅反应或腐蚀 运动到表面的方式将影响到选择比, 过刻, 和均匀性 NO2是硅的有效氧化剂 硅的HNA腐蚀-4 醋酸的作用 常用水代替CH3COOH 醋酸的电绝缘常数比水低 ? CH3COOH -- 6.15 H2O --- 81 ? 减少了硝酸的溶解，提高了氧化能力 硅的HNA腐蚀-5 硅的HNA腐蚀-6 硅的HNA腐蚀-7 区1： 高HF浓度区，腐蚀曲线平行于硝酸浓度刻度，腐蚀受硝酸控制。留下少部分氧化物 区2： 高硝酸浓度区，腐蚀曲线平行于氢氟酸浓度刻度，腐蚀受氢氟酸控制。 区3： 腐蚀受水的影响不大，当HF:HNO3=1:1时，腐蚀速率下降很快 * * * * * * * * * * 光刻胶的对比度 对比度： 光刻胶的涂敷与显影 显影中的三个主要问题 甩胶 先进光刻技术 浸入光刻 Immersion Lithography 电子束光刻 Electron beam Lithography X-Ray Lithography 离子束光刻 Ion Beam Lithography 纳米压印光刻Nanoimprint Lithography 浸入光刻 A liquid with index of refraction n1 is introduced between the imaging optics and the wafer. 优点: 分辨率与n成正比; 聚焦深度增加 电子束光刻 波长 例: 30keV, ?=0.07A 缺点: 束流大, 10’s mA 产量低, 10wafers/hr. X-Ray Lithography Synchrotron Radiation 投影式X射线光刻 离子束光刻 Pt 淀积 FEA 制造 纳米压印光刻 纳米压印光刻 极高分辨率: 可以形成10nm的结构 Lift Off 工艺 Lift-off is a additive process for metal film patterning: The wafer is completely covered by a photoresist layer pattened with openings where the final material is to appear The thin film layer is deposited over the surface of the wafer Any material deposited on top of the resist will be removed with the resist, leaving the patterned materials on the wafer Lift-off requires the metal film to be thinner than the photoresist. This requirement limits the meta llinewidth. Thinner linewidths normally require thinner photoresist layers. 台阶效应 双面光刻 For MEMS device, there is a need for double-sided lithography tool Two companies: KarlSüss GmbH, Munich, Germany KarlSüssMA-150 production mode system Electronic Versions Campany,Sch?rding, Austria Operation The mask is mechanically clamped The alignment marks on the mask are viewed by a set of dual objectives, and image is electronically stored Wafer is then loaded with backside alignment marks facing the microscope objectives The alignment marks is aligned to the stored image. After alignment, e